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| Parameter | IRFL014N | IRFL014NPBF | IRFL014NTR | IRFL014NTRPBF | IRFL014PBF | IRFL014TR | IRFL014TRPBF | |
|---|---|---|---|---|---|---|---|---|
IC package | Package | SOT-223 (3 leads + Tab), SC-73, TO-261AA | ||||||
Manufacturer | Manufacturer | International Rectifier | International Rectifier | International Rectifier | International Rectifier | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||||
Power dissipation | P | <1 W | <1 W | <1 W | <1 W | <2 W | <2 W | <2 W |
Input capacitance of field effect transistor | Ciss | 190 pFVds = 25V | 190 pFVds = 25V | 190 pFVds = 25V | 190 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <55 V | <55 V | <55 V | <55 V | <60 V | <60 V | <60 V |
Continuous drain current | IDSS | <1.9 A | <1.9 A | <1.9 A | <1.9 A | <2.7 A | <2.7 A | <2.7 A |
FET channel type | Channel | N-ch | ||||||
Channel resistance at ON state | RDS-ON | <160 mΩId, Vgs = 1.9A, 10V | <160 mΩId, Vgs = 1.9A, 10V | <160 mΩId, Vgs = 1.9A, 10V | <160 mΩId, Vgs = 1.9A, 10V | <200 mΩId, Vgs = 1.6A, 10V | <200 mΩId, Vgs = 1.6A, 10V | <200 mΩId, Vgs = 1.6A, 10V |
MOSFET series | Series | HEXFET® | HEXFET® | HEXFET® | HEXFET® | (not set) | (not set) | (not set) |
Gate charge | QG | 11 nCVgs = 10V | ||||||
FET Feature | FET Feature | Standard | ||||||