IRFIZ48G

IRFIZ48, IRFIZ48G, IRFIZ48GPBF, IRFIZ48N, IRFIZ48NPBF, IRFIZ48VPBF

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Description

Parameters

ParameterIRFIZ48GIRFIZ48GPBFIRFIZ48NIRFIZ48NPBFIRFIZ48VPBF
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)
Manufacturer
Manufacturer
Vishay/SiliconixVishay/SiliconixInternational RectifierInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<50 W<50 W<42 W<54 W<43 W
Input capacitance of field effect transistor
Ciss
2.4 nFVds = 25V2.4 nFVds = 25V1.9 nFVds = 25V1.9 nFVds = 25V1.985 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V<60 V<55 V<55 V<60 V
Continuous drain current
IDSS
<37 A<37 A<36 A<40 A<39 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<18 mΩId, Vgs = 22A, 10V<18 mΩId, Vgs = 22A, 10V<16 mΩId, Vgs = 22A, 10V<16 mΩId, Vgs = 22A, 10V<12 mΩId, Vgs = 43A, 10V
MOSFET series
Series
(not set)(not set)HEXFET®HEXFET®HEXFET®
Gate charge
QG
110 nCVgs = 10V110 nCVgs = 10V89 nCVgs = 10V89 nCVgs = 10V110 nCVgs = 10V
FET Feature
FET Feature
Standard