IRFIZ34E

IRFIZ34, IRFIZ34E, IRFIZ34EPBF, IRFIZ34G, IRFIZ34GPBF, IRFIZ34N, IRFIZ34NPBF, IRFIZ34VPBF

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Description

Parameters

ParameterIRFIZ34EIRFIZ34EPBFIRFIZ34GIRFIZ34GPBFIRFIZ34NIRFIZ34NPBFIRFIZ34VPBF
IC package
Package
TO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-5 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)
Manufacturer
Manufacturer
International RectifierInternational RectifierVishay/SiliconixVishay/SiliconixInternational RectifierInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<37 W<37 W<42 W<42 W<37 W<37 W<30 W
Input capacitance of field effect transistor
Ciss
700 pFVds = 25V700 pFVds = 25V1.2 nFVds = 25V1.2 nFVds = 25V700 pFVds = 25V700 pFVds = 25V1.12 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V<60 V<60 V<60 V<55 V<55 V<60 V
Continuous drain current
IDSS
<21 A<21 A<20 A<20 A<21 A<21 A<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<42 mΩId, Vgs = 11A, 10V<42 mΩId, Vgs = 11A, 10V<50 mΩId, Vgs = 12A, 10V<50 mΩId, Vgs = 12A, 10V<40 mΩId, Vgs = 11A, 10V<40 mΩId, Vgs = 11A, 10V<28 mΩId, Vgs = 18A, 10V
MOSFET series
Series
HEXFET®HEXFET®(not set)(not set)HEXFET®HEXFET®HEXFET®
Gate charge
QG
34 nCVgs = 10V34 nCVgs = 10V46 nCVgs = 10V46 nCVgs = 10V34 nCVgs = 10V34 nCVgs = 10V49 nCVgs = 10V
FET Feature
FET Feature
Standard