IRFIZ24E

IRFIZ24, IRFIZ24E, IRFIZ24EPBF, IRFIZ24G, IRFIZ24GPBF, IRFIZ24N, IRFIZ24NPBF

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Description

Parameters

ParameterIRFIZ24EIRFIZ24EPBFIRFIZ24GIRFIZ24GPBFIRFIZ24NIRFIZ24NPBF
IC package
Package
TO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)
Manufacturer
Manufacturer
International RectifierInternational RectifierVishay/SiliconixVishay/SiliconixInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<29 W<29 W<37 W<37 W<29 W<29 W
Input capacitance of field effect transistor
Ciss
370 pFVds = 25V370 pFVds = 25V640 pFVds = 25V640 pFVds = 25V370 pFVds = 25V370 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V<60 V<60 V<60 V<55 V<55 V
Continuous drain current
IDSS
<14 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<71 mΩId, Vgs = 7.8A, 10V<71 mΩId, Vgs = 7.8A, 10V<100 mΩId, Vgs = 8.4A, 10V<100 mΩId, Vgs = 8.4A, 10V<70 mΩId, Vgs = 7.8A, 10V<70 mΩId, Vgs = 7.8A, 10V
MOSFET series
Series
HEXFET®HEXFET®(not set)(not set)HEXFET®HEXFET®
Gate charge
QG
20 nCVgs = 10V20 nCVgs = 10V25 nCVgs = 10V25 nCVgs = 10V20 nCVgs = 10V20 nCVgs = 10V
FET Feature
FET Feature
Standard