IRFIB8N50K

IRFIB8, IRFIB8N50K, IRFIB8N50KPBF

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIRFIB8N50KIRFIB8N50KPBF
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<45 W
Input capacitance of field effect transistor
Ciss
2.16 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<6.7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<350 mΩId, Vgs = 4A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
89 nCVgs = 10V
FET Feature
FET Feature
Standard