IRFIB5N65A

IRFIB5, IRFIB5N50LPBF, IRFIB5N65A, IRFIB5N65A-38, IRFIB5N65APBF

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Description

Parameters

ParameterIRFIB5N50LPBFIRFIB5N65AIRFIB5N65A-38IRFIB5N65APBF
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<42 W<60 W<60 W<60 W
Input capacitance of field effect transistor
Ciss
1 nFVds = 25V1.417 nFVds = 25V1.417 nFVds = 25V1.417 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V<650 V<650 V<650 V
Continuous drain current
IDSS
<4.7 A<5.1 A<5.1 A<5.1 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<800 mΩId, Vgs = 2.4A, 10V<930 mΩId, Vgs = 3.1A, 10V<930 mΩId, Vgs = 3.1A, 10V<930 mΩId, Vgs = 3.1A, 10V
MOSFET series
Series
(not set)HEXFET®(not set)HEXFET®
Gate charge
QG
45 nCVgs = 10V48 nCVgs = 10V48 nCVgs = 10V48 nCVgs = 10V
FET Feature
FET Feature
Standard