IRFI9

IRFI9, IRFI9Z14G, IRFI9Z14GPBF, IRFI9Z24G, IRFI9Z24GPBF, IRFI9Z24N, IRFI9Z34G, IRFI9Z34GPBF, IRFI9Z34N

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Description

Parameters

ParameterIRFI9Z14GIRFI9Z14GPBFIRFI9Z24GIRFI9Z24GPBFIRFI9Z24NIRFI9Z34GIRFI9Z34GPBFIRFI9Z34N
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads)
Manufacturer
Manufacturer
Vishay/SiliconixVishay/SiliconixVishay/SiliconixVishay/SiliconixInternational RectifierVishay/SiliconixVishay/SiliconixInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<27 W<27 W<37 W<37 W<29 W<42 W<42 W<37 W
Input capacitance of field effect transistor
Ciss
270 pFVds = 25V270 pFVds = 25V570 pFVds = 25V570 pFVds = 25V350 pFVds = 25V1.1 nFVds = 25V1.1 nFVds = 25V620 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V<60 V<60 V<60 V<55 V<60 V<60 V<55 V
Continuous drain current
IDSS
<5.3 A<5.3 A<8.5 A<8.5 A<9.5 A<12 A<12 A<14 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<500 mΩId, Vgs = 3.2A, 10V<500 mΩId, Vgs = 3.2A, 10V<280 mΩId, Vgs = 5.1A, 10V<280 mΩId, Vgs = 5.1A, 10V<175 mΩId, Vgs = 5.4A, 10V<140 mΩId, Vgs = 7.2A, 10V<140 mΩId, Vgs = 7.2A, 10V<100 mΩId, Vgs = 7.8A, 10V
MOSFET series
Series
(not set)(not set)(not set)(not set)HEXFET®(not set)(not set)HEXFET®
Gate charge
QG
12 nCVgs = 10V12 nCVgs = 10V19 nCVgs = 10V19 nCVgs = 10V19 nCVgs = 10V34 nCVgs = 10V34 nCVgs = 10V35 nCVgs = 10V
FET Feature
FET Feature
Standard