IRFI9520G

IRFI9520, IRFI9520G, IRFI9520GPBF, IRFI9520N

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIRFI9520GIRFI9520GPBFIRFI9520N
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<37 W<37 W<30 W
Input capacitance of field effect transistor
Ciss
390 pFVds = 25V390 pFVds = 25V350 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<5.2 A<5.2 A<5.5 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<600 mΩId, Vgs = 3.1A, 10V<600 mΩId, Vgs = 3.1A, 10V<480 mΩId, Vgs = 4A, 10V
MOSFET series
Series
(not set)(not set)HEXFET®
Gate charge
QG
18 nCVgs = 10V18 nCVgs = 10V27 nCVgs = 10V
FET Feature
FET Feature
Standard