IRFI530

IRFI530, IRFI530G, IRFI530GPBF, IRFI530N, IRFI530NPBF

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Description

Parameters

ParameterIRFI530GIRFI530GPBFIRFI530NIRFI530NPBF
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)
Manufacturer
Manufacturer
Vishay/SiliconixVishay/SiliconixInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<42 W<42 W<41 W<41 W
Input capacitance of field effect transistor
Ciss
670 pFVds = 25V670 pFVds = 25V640 pFVds = 25V640 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<9.7 A<9.7 A<12 A<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<160 mΩId, Vgs = 5.8A, 10V<160 mΩId, Vgs = 5.8A, 10V<110 mΩId, Vgs = 6.6A, 10V<110 mΩId, Vgs = 6.6A, 10V
MOSFET series
Series
(not set)HEXFET®HEXFET®HEXFET®
Gate charge
QG
33 nCVgs = 10V33 nCVgs = 10V44 nCVgs = 10V44 nCVgs = 10V
FET Feature
FET Feature
Standard