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| Parameter | IRFI520G | IRFI520GPBF | IRFI520N | IRFI520NPBF | |
|---|---|---|---|---|---|
IC package | Package | TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | TO-220-3 Full Pack (Straight Leads) | TO-220F |
Manufacturer | Manufacturer | Vishay/Siliconix | Vishay/Siliconix | International Rectifier | International Rectifier |
Type of mounting a component on a board/circuit | Mount | Through-hole | |||
Power dissipation | P | <37 W | <37 W | <30 W | <30 W |
Input capacitance of field effect transistor | Ciss | 360 pFVds = 25V | 360 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V | |||
Continuous drain current | IDSS | <7.2 A | <7.2 A | <7.6 A | <7.6 A |
FET channel type | Channel | N-ch | |||
Channel resistance at ON state | RDS-ON | <270 mΩId, Vgs = 4.3A, 10V | <270 mΩId, Vgs = 4.3A, 10V | <200 mΩId, Vgs = 4.3A, 10V | <200 mΩId, Vgs = 4.3A, 10V |
MOSFET series | Series | (not set) | (not set) | HEXFET® | HEXFET® |
Gate charge | QG | 16 nCVgs = 10V | 16 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V |
FET Feature | FET Feature | Standard | |||