IRFH7932TR2PBF

IRFH7932, IRFH7932TR2PBF, IRFH7932TRPBF

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Description

Parameters

ParameterIRFH7932TR2PBFIRFH7932TRPBF
IC package
Package
8-PQFN
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<3.1 W
Input capacitance of field effect transistor
Ciss
4.27 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<24 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<3.3 mΩId, Vgs = 25A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
51 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate