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| Parameter | IRFD9113 | |
|---|---|---|
IC package | Package | 4-DIP, HVMDIP |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <1 W |
Input capacitance of field effect transistor | Ciss | 250 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <600 mA |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <1.6 ΩId, Vgs = 300mA, 10V |
Gate charge | QG | 15 nCVgs = 15V |
FET Feature | FET Feature | Standard |