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| Parameter | IRFD020PBF | |
|---|---|---|
IC package | Package | 4-DIP, HVMDIP |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <1 W |
Input capacitance of field effect transistor | Ciss | 400 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <50 V |
Continuous drain current | IDSS | <2.4 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <100 mΩId, Vgs = 1.4A, 10V |
MOSFET series | Series | HEXFET® |
Gate charge | QG | 24 nCVgs = 10V |
FET Feature | FET Feature | Standard |