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| Parameter | IRFBG30L | IRFBG30PBF | IRFBG30S | IRFBG30STRL | IRFBG30STRR | |
|---|---|---|---|---|---|---|
IC package | Package | TO-220-3 (Straight Leads), I²Pak, TO-262 (3 straight leads + tab) | TO-220-3 (Straight Leads), TO-220-3 (Straight Leads) | TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab) | TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab) | TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab) |
Manufacturer | Manufacturer | Vishay/Siliconix | ||||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Surface mount | Surface mount | Surface mount |
Power dissipation | P | <125 W | ||||
Input capacitance of field effect transistor | Ciss | 980 pFVds = 25V | ||||
Continuous drain current | IDSS | <3.1 A | ||||
FET channel type | Channel | N-ch | ||||
Channel resistance at ON state | RDS-ON | <5 ΩId, Vgs = 1.9A, 10V | ||||
MOSFET series | Series | HEXFET® | (not set) | (not set) | (not set) | (not set) |
Gate charge | QG | 80 nCVgs = 10V | ||||
FET Feature | FET Feature | Standard | ||||