IRFBA22N50APBF

IRFBA22, IRFBA22N50A, IRFBA22N50APBF

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Description

Parameters

ParameterIRFBA22N50AIRFBA22N50APBF
IC package
Package
Super-220™
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<340 W
Input capacitance of field effect transistor
Ciss
3.4 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<24 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<230 mΩId, Vgs = 13.8A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
115 nCVgs = 10V
FET Feature
FET Feature
Standard