IRFB9N30A

IRFB9, IRFB9N30A, IRFB9N30APBF, IRFB9N60A, IRFB9N60APBF, IRFB9N65A, IRFB9N65APBF

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Description

Parameters

ParameterIRFB9N30AIRFB9N30APBFIRFB9N60AIRFB9N60APBFIRFB9N65AIRFB9N65APBF
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<96 W<96 W<170 W<170 W<167 W<167 W
Input capacitance of field effect transistor
Ciss
920 pFVds = 25V920 pFVds = 25V1.4 nFVds = 25V1.4 nFVds = 25V1.417 nFVds = 25V1.417 nFVds = 25V
Continuous voltage between drain and source
UDSS
<300 V<300 V<600 V<600 V<650 V<650 V
Continuous drain current
IDSS
<9.3 A<9.3 A<9.2 A<9.2 A<8.5 A<8.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 5.6A, 10V<450 mΩId, Vgs = 5.6A, 10V<750 mΩId, Vgs = 5.5A, 10V<750 mΩId, Vgs = 5.5A, 10V<930 mΩId, Vgs = 5.1A, 10V<930 mΩId, Vgs = 5.1A, 10V
MOSFET series
Series
HEXFET®HEXFET®(not set)(not set)(not set)(not set)
Gate charge
QG
33 nCVgs = 10V33 nCVgs = 10V49 nCVgs = 10V49 nCVgs = 10V48 nCVgs = 10V48 nCVgs = 10V
FET Feature
FET Feature
Standard