IRFB23

IRFB23, IRFB23N15D, IRFB23N15DPBF, IRFB23N20D, IRFB23N20DPBF

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Description

Parameters

ParameterIRFB23N15DIRFB23N15DPBFIRFB23N20DIRFB23N20DPBF
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<3.8 W
Input capacitance of field effect transistor
Ciss
1.2 nFVds = 25V1.2 nFVds = 25V1.96 nFVds = 25V1.96 nFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V<150 V<200 V<200 V
Continuous drain current
IDSS
<23 A<23 A<24 A<24 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<90 mΩId, Vgs = 14A, 10V<90 mΩId, Vgs = 14A, 10V<100 mΩId, Vgs = 14A, 10V<100 mΩId, Vgs = 14A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
56 nCVgs = 10V56 nCVgs = 10V86 nCVgs = 10V86 nCVgs = 10V
FET Feature
FET Feature
Standard