IRFB18N50KPBF

IRFB18, IRFB18N50K, IRFB18N50KPBF

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Description

Parameters

ParameterIRFB18N50KIRFB18N50KPBF
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<220 W
Input capacitance of field effect transistor
Ciss
2.83 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<17 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<290 mΩId, Vgs = 10A, 10V
Gate charge
QG
120 nCVgs = 10V
FET Feature
FET Feature
Standard