IRFB17

IRFB17, IRFB17N20D, IRFB17N20DPBF, IRFB17N50L, IRFB17N50LPBF, IRFB17N60K, IRFB17N60KPBF

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Description

Parameters

ParameterIRFB17N20DIRFB17N20DPBFIRFB17N50LIRFB17N50LPBFIRFB17N60KIRFB17N60KPBF
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
International RectifierInternational RectifierVishay/SiliconixVishay/SiliconixVishay/SiliconixVishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<3.8 W<3.8 W<220 W<220 W<340 W<340 W
Input capacitance of field effect transistor
Ciss
1.1 nFVds = 25V1.1 nFVds = 25V2.76 nFVds = 25V2.76 nFVds = 25V2.7 nFVds = 25V2.7 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V<200 V<500 V<500 V<600 V<600 V
Continuous drain current
IDSS
<16 A<16 A<16 A<16 A<17 A<17 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<170 mΩId, Vgs = 9.8A, 10V<170 mΩId, Vgs = 9.8A, 10V<320 mΩId, Vgs = 9.9A, 10V<320 mΩId, Vgs = 9.9A, 10V<420 mΩId, Vgs = 10A, 10V<420 mΩId, Vgs = 10A, 10V
MOSFET series
Series
HEXFET®HEXFET®(not set)(not set)(not set)(not set)
Gate charge
QG
50 nCVgs = 10V50 nCVgs = 10V130 nCVgs = 10V130 nCVgs = 10V99 nCVgs = 10V99 nCVgs = 10V
FET Feature
FET Feature
Standard