IRFB11

IRFB11, IRFB11N50A, IRFB11N50APBF

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Description

Parameters

ParameterIRFB11N50AIRFB11N50APBF
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<170 W
Input capacitance of field effect transistor
Ciss
1.423 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<520 mΩId, Vgs = 6.6A, 10V
Gate charge
QG
52 nCVgs = 10V
FET Feature
FET Feature
Standard