IRF8010PBF

IRF8010, IRF8010LPBF, IRF8010PBF, IRF8010SPBF, IRF8010STRLPBF, IRF8010STRRPBF

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Description

Parameters

ParameterIRF8010LPBFIRF8010PBFIRF8010SPBFIRF8010STRLPBFIRF8010STRRPBF
IC package
Package
TO-262TO-220-3 (Straight Leads)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mountSurface mountSurface mount
Power dissipation
P
<260 W
Input capacitance of field effect transistor
Ciss
3.83 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<80 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<15 mΩId, Vgs = 45A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
120 nCVgs = 10V
FET Feature
FET Feature
Standard