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| Parameter | IRF7832PBF | IRF7832TR | IRF7832TRPBF | IRF7832Z | IRF7832ZPBF | IRF7832ZTR | IRF7832ZTRPBF | |
|---|---|---|---|---|---|---|---|---|
IC package | Package | 8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width) | 8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width) | 8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width) | 8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width) | 8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width) | 8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width) | 8-SOIC (3.9mm Width), SO-8 |
Manufacturer | Manufacturer | International Rectifier | ||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||||
Power dissipation | P | <2.5 W | ||||||
Input capacitance of field effect transistor | Ciss | 4.31 nFVds = 15V | 4.31 nFVds = 15V | 4.31 nFVds = 15V | 3.86 nFVds = 15V | 3.86 nFVds = 15V | 3.86 nFVds = 15V | 3.86 nFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V | ||||||
Continuous drain current | IDSS | <20 A | <20 A | <20 A | <21 A | <21 A | <21 A | <21 A |
FET channel type | Channel | N-ch | ||||||
Channel resistance at ON state | RDS-ON | <4 mΩId, Vgs = 20A, 10V | <4 mΩId, Vgs = 20A, 10V | <4 mΩId, Vgs = 20A, 10V | <3.8 mΩId, Vgs = 20A, 10V | <3.8 mΩId, Vgs = 20A, 10V | <3.8 mΩId, Vgs = 20A, 10V | <3.8 mΩId, Vgs = 20A, 10V |
MOSFET series | Series | HEXFET® | ||||||
Gate charge | QG | 51 nCVgs = 4.5V | 51 nCVgs = 4.5V | 51 nCVgs = 4.5V | 45 nCVgs = 4.5V | 45 nCVgs = 4.5V | 45 nCVgs = 4.5V | 45 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate | ||||||