IRF7706GTRPBF

IRF7706, IRF7706GTRPBF, IRF7706TR, IRF7706TRPBF

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Description

Parameters

ParameterIRF7706GTRPBFIRF7706TRIRF7706TRPBF
IC package
Package
8-TSSOP
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.51 W
Input capacitance of field effect transistor
Ciss
2.211 nFVds = 25V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<7 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<22 mΩId, Vgs = 7A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
72 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate