IRF7601TR

IRF7601, IRF7601PBF, IRF7601TR, IRF7601TRPBF

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Description

Parameters

ParameterIRF7601PBFIRF7601TRIRF7601TRPBF
IC package
Package
Micro8™
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.8 W
Input capacitance of field effect transistor
Ciss
650 pFVds = 15V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<5.7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<35 mΩId, Vgs = 3.8A, 4.5V
MOSFET series
Series
HEXFET®
Gate charge
QG
22 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate