IRF7413ATR

IRF7413, IRF7413A, IRF7413ATR, IRF7413PBF, IRF7413QPBF, IRF7413QTRPBF, IRF7413TR, IRF7413TRPBF, IRF7413Z, IRF7413ZPBF, IRF7413ZTR, IRF7413ZTRPBF

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Description

Parameters

ParameterIRF7413AIRF7413ATRIRF7413PBFIRF7413QPBFIRF7413QTRPBFIRF7413TRIRF7413TRPBFIRF7413ZIRF7413ZPBFIRF7413ZTRIRF7413ZTRPBF
IC package
Package
8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), SO-88-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)8-SOIC (3.9mm Width), 8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
1.8 nFVds = 25V1.8 nFVds = 25V1.8 nFVds = 25V1.8 nFVds = 25V1.8 nFVds = 25V1.8 nFVds = 25V1.8 nFVds = 25V1.21 nFVds = 15V1.21 nFVds = 15V1.21 nFVds = 15V1.21 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<12 A<12 A<13 A<13 A<13 A<13 A<13 A<13 A<13 A<13 A<13 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<13.5 mΩId, Vgs = 6.6A, 10V<13.5 mΩId, Vgs = 6.6A, 10V<11 mΩId, Vgs = 7.3A, 10V<11 mΩId, Vgs = 7.3A, 10V<11 mΩId, Vgs = 7.3A, 10V<11 mΩId, Vgs = 7.3A, 10V<11 mΩId, Vgs = 7.3A, 10V<10 mΩId, Vgs = 13A, 10V<10 mΩId, Vgs = 13A, 10V<10 mΩId, Vgs = 13A, 10V<10 mΩId, Vgs = 13A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
79 nCVgs = 10V79 nCVgs = 10V79 nCVgs = 10V79 nCVgs = 10V79 nCVgs = 10V79 nCVgs = 10V79 nCVgs = 10V14 nCVgs = 4.5V14 nCVgs = 4.5V14 nCVgs = 4.5V14 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate