IRF6722MTR1PBF

IRF6722, IRF6722MTR1PBF, IRF6722MTRPBF, IRF6722STR1PBF, IRF6722STRPBF

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Description

Parameters

ParameterIRF6722MTR1PBFIRF6722MTRPBFIRF6722STR1PBFIRF6722STRPBF
IC package
Package
DirectFET™ Isometric MPDirectFET™ Isometric MPDirectFET™ Isometric STDirectFET™ Isometric ST
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.3 W<2.3 W<2.2 W<2.2 W
Input capacitance of field effect transistor
Ciss
1.3 nFVds = 15V1.3 nFVds = 15V1.32 nFVds = 15V1.32 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<13 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<7.7 mΩId, Vgs = 13A, 10V<7.7 mΩId, Vgs = 13A, 10V<7.3 mΩId, Vgs = 13A, 10V<7.3 mΩId, Vgs = 13A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
17 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate