IRF6710

IRF6710, IRF6710S2TR1PBF, IRF6710S2TRPBF

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Description

Parameters

ParameterIRF6710S2TR1PBFIRF6710S2TRPBF
IC package
Package
DirectFET™ Isometric S1
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.8 W
Input capacitance of field effect transistor
Ciss
1.19 nFVds = 13V
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5.9 mΩId, Vgs = 12A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
13 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate