IRF6668

IRF6668, IRF6668TR1PBF, IRF6668TRPBF

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Description

Parameters

ParameterIRF6668TR1PBFIRF6668TRPBF
IC package
Package
DirectFET™ Isometric MZ
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.8 W
Input capacitance of field effect transistor
Ciss
1.32 nFVds = 25V
Continuous voltage between drain and source
UDSS
<80 V
Continuous drain current
IDSS
<55 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<15 mΩId, Vgs = 12A, 10V
Gate charge
QG
31 nCVgs = 10V
FET Feature
FET Feature
Standard