IRF6623TR1PBF

IRF6623, IRF6623TR1, IRF6623TR1PBF, IRF6623TRPBF

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Description

Parameters

ParameterIRF6623TR1IRF6623TR1PBFIRF6623TRPBF
IC package
Package
DirectFET™ Isometric ST
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.4 W
Input capacitance of field effect transistor
Ciss
1.36 nFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<16 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5.7 mΩId, Vgs = 15A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
17 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate