IRF6616TR1

IRF6616, IRF6616TR1, IRF6616TR1PBF, IRF6616TRPBF

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Description

Parameters

ParameterIRF6616TR1IRF6616TR1PBFIRF6616TRPBF
IC package
Package
DirectFET™ Isometric MX
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.8 W
Input capacitance of field effect transistor
Ciss
3.765 nFVds = 20V
Continuous voltage between drain and source
UDSS
<30 V<40 V<40 V
Continuous drain current
IDSS
<19 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5 mΩId, Vgs = 19A, 10V
MOSFET series
Series
(not set)HEXFET®HEXFET®
Gate charge
QG
44 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate