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| Parameter | IRF6609TR1 | IRF6609TR1PBF | IRF6609TRPBF | |
|---|---|---|---|---|
IC package | Package | DirectFET™ Isometric MT | ||
Manufacturer | Manufacturer | International Rectifier | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <1.8 W | ||
Input capacitance of field effect transistor | Ciss | 6.29 nFVds = 10V | ||
Continuous voltage between drain and source | UDSS | <20 V | ||
Continuous drain current | IDSS | <31 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <2 mΩId, Vgs = 31A, 10V | ||
MOSFET series | Series | HEXFET® | ||
Gate charge | QG | 69 nCVgs = 4.5V | ||
FET Feature | FET Feature | Logic Level Gate | ||