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| Parameter | IRF6604TR1 | |
|---|---|---|
IC package | Package | DirectFET™ Isometric MQ |
Manufacturer | Manufacturer | International Rectifier |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2.3 W |
Input capacitance of field effect transistor | Ciss | 2.27 nFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <12 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <11.5 mΩId, Vgs = 12A, 7V |
MOSFET series | Series | HEXFET® |
Gate charge | QG | 26 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |