IRF5803D2PBF

IRF5803, IRF5803D2, IRF5803D2PBF, IRF5803D2TR, IRF5803D2TRPBF, IRF5803TR, IRF5803TRPBF

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Description

Parameters

ParameterIRF5803D2IRF5803D2PBFIRF5803D2TRIRF5803D2TRPBFIRF5803TRIRF5803TRPBF
IC package
Package
6-TSOP, 8-SOIC (3.9mm Width)6-TSOP, 8-SOIC (3.9mm Width)6-TSOP, 8-SOIC (3.9mm Width)6-TSOP, SO-86-TSOP, Micro6™(TSOP-6)6-TSOP, 6-TSOP
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
1.11 nFVds = 25V
Continuous voltage between drain and source
UDSS
<40 V
Continuous drain current
IDSS
<3.4 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<112 mΩId, Vgs = 3.4A, 10V
MOSFET series
Series
FETKY™FETKY™FETKY™FETKY™HEXFET®HEXFET®
Gate charge
QG
37 nCVgs = 10V
FET Feature
FET Feature
Diode (Isolated)Diode (Isolated)Diode (Isolated)Diode (Isolated)Logic Level GateLogic Level Gate