IRF5802TR

IRF5802, IRF5802TR, IRF5802TRPBF

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Description

Parameters

ParameterIRF5802TRIRF5802TRPBF
IC package
Package
Micro6™(TSOP-6), Micro6™(TSOP-6)Micro6™(TSOP-6), 6-TSOP
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
88 pFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V
Continuous drain current
IDSS
<900 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.2 ΩId, Vgs = 540mA, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
6.8 nCVgs = 10V
FET Feature
FET Feature
Standard