IRF5210L

IRF5210, IRF5210L, IRF5210LPBF, IRF5210PBF, IRF5210S, IRF5210SPBF, IRF5210STRL, IRF5210STRLPBF, IRF5210STRR, IRF5210STRRPBF

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Description

Parameters

ParameterIRF5210LIRF5210LPBFIRF5210PBFIRF5210SIRF5210SPBFIRF5210STRLIRF5210STRLPBFIRF5210STRRIRF5210STRRPBF
IC package
Package
TO-220-3 (Straight Leads), TO-262-3 (Straight Leads)TO-220-3 (Straight Leads), TO-262TO-220-3 (Straight Leads), TO-220-3 (Straight Leads)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mountSurface mount
Power dissipation
P
<3.8 W<3.1 W<200 W<3.8 W<3.1 W<3.8 W<3.1 W<3.8 W<3.1 W
Input capacitance of field effect transistor
Ciss
2.7 nFVds = 25V2.78 nFVds = 25V2.7 nFVds = 25V2.7 nFVds = 25V2.78 nFVds = 25V2.7 nFVds = 25V2.78 nFVds = 25V2.7 nFVds = 25V2.78 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<40 A<38 A<40 A<40 A<38 A<40 A<38 A<40 A<38 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<60 mΩId, Vgs = 24A, 10V<60 mΩId, Vgs = 38A, 10V<60 mΩId, Vgs = 24A, 10V<60 mΩId, Vgs = 24A, 10V<60 mΩId, Vgs = 38A, 10V<60 mΩId, Vgs = 24A, 10V<60 mΩId, Vgs = 38A, 10V<60 mΩId, Vgs = 24A, 10V<60 mΩId, Vgs = 38A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
180 nCVgs = 10V230 nCVgs = 10V180 nCVgs = 10V180 nCVgs = 10V230 nCVgs = 10V180 nCVgs = 10V230 nCVgs = 10V180 nCVgs = 10V230 nCVgs = 10V
FET Feature
FET Feature
Standard