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| Parameter | IRF3808LPBF | IRF3808PBF | IRF3808SPBF | IRF3808STRLPBF | IRF3808STRRPBF | |
|---|---|---|---|---|---|---|
IC package | Package | TO-262-3 (Straight Leads) | TO-220-3 (Straight Leads) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) |
Manufacturer | Manufacturer | International Rectifier | ||||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Surface mount | Surface mount | Surface mount |
Power dissipation | P | <200 W | <330 W | <200 W | <200 W | <200 W |
Input capacitance of field effect transistor | Ciss | 5.31 nFVds = 25V | ||||
Continuous voltage between drain and source | UDSS | <75 V | ||||
Continuous drain current | IDSS | <106 A | <140 A | <106 A | <106 A | <106 A |
FET channel type | Channel | N-ch | ||||
Channel resistance at ON state | RDS-ON | <7 mΩId, Vgs = 82A, 10V | ||||
MOSFET series | Series | HEXFET® | ||||
Gate charge | QG | 220 nCVgs = 10V | ||||
FET Feature | FET Feature | Standard | ||||