IRF2805PBF

IRF2805, IRF2805LPBF, IRF2805PBF, IRF2805SPBF, IRF2805STRLPBF, IRF2805STRRPBF

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Description

Parameters

ParameterIRF2805LPBFIRF2805PBFIRF2805SPBFIRF2805STRLPBFIRF2805STRRPBF
IC package
Package
TO-262-3 (Straight Leads)TO-220-3 (Straight Leads)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mountSurface mountSurface mount
Power dissipation
P
<200 W<330 W<200 W<200 W<200 W
Input capacitance of field effect transistor
Ciss
5.11 nFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<135 A<75 A<135 A<135 A<135 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<4.7 mΩId, Vgs = 104A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
230 nCVgs = 10V
FET Feature
FET Feature
StandardLogic Level GateStandardStandardStandard