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| Parameter | IRF1310N | IRF1310NL | IRF1310NLPBF | IRF1310NPBF | IRF1310NS | IRF1310NSPBF | IRF1310NSTRL | IRF1310NSTRLPBF | IRF1310NSTRR | IRF1310NSTRRPBF | |
|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | TO-220-3 (Straight Leads) | TO-262-3 (Straight Leads) | TO-262-3 (Straight Leads) | TO-220-3 (Straight Leads) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) |
Manufacturer | Manufacturer | International Rectifier | |||||||||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Through-hole | Through-hole | Surface mount | Surface mount | Surface mount | Surface mount | Surface mount | Surface mount |
Power dissipation | P | <160 W | <3.8 W | <3.8 W | <160 W | <3.8 W | <3.8 W | <3.8 W | <3.8 W | <3.8 W | <3.8 W |
Input capacitance of field effect transistor | Ciss | 1.9 nFVds = 25V | |||||||||
Continuous voltage between drain and source | UDSS | <100 V | |||||||||
Continuous drain current | IDSS | <42 A | |||||||||
FET channel type | Channel | N-ch | |||||||||
Channel resistance at ON state | RDS-ON | <36 mΩId, Vgs = 22A, 10V | |||||||||
MOSFET series | Series | HEXFET® | |||||||||
Gate charge | QG | 110 nCVgs = 10V | |||||||||
FET Feature | FET Feature | Standard | |||||||||