IRF1018

IRF1018, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, IRF1018ESTRLPBF

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Description

Parameters

ParameterIRF1018EPBFIRF1018ESLPBFIRF1018ESPBFIRF1018ESTRLPBF
IC package
Package
TO-220ABTO-262D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mountSurface mount
Power dissipation
P
<110 W
Input capacitance of field effect transistor
Ciss
2.29 nFVds = 50V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<79 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<8.4 mΩId, Vgs = 47A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
69 nCVgs = 10V
FET Feature
FET Feature
Standard