IRC644

IRC644, IRC644PBF

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Description

Parameters

ParameterIRC644PBF
IC package
Package
TO-220-5 (Straight Leads)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<125 W
Input capacitance of field effect transistor
Ciss
1.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<250 V
Continuous drain current
IDSS
<14 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<280 mΩId, Vgs = 8.4A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
65 nCVgs = 10V
FET Feature
FET Feature
Current Sensing