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| Parameter | IPS12CN10LG | |
|---|---|---|
IC package | Package | IPak, TO-251, DPak (3 straight short leads + tab) |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <125 W |
Input capacitance of field effect transistor | Ciss | 5.6 nFVds = 50V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <69 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <11.8 mΩId, Vgs = 69A, 10V |
MOSFET series | Series | OptiMOS™ |
Gate charge | QG | 58 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |