IPP04N03

IPP04N03, IPP04N03LA, IPP04N03LBG

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Description

Parameters

ParameterIPP04N03LAIPP04N03LBG
IC package
Package
TO-220ABTO-220
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<107 W
Input capacitance of field effect transistor
Ciss
3.877 nFVds = 15V5.203 nFVds = 15V
Continuous voltage between drain and source
UDSS
<25 V<30 V
Continuous drain current
IDSS
<80 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<4.2 mΩId, Vgs = 55A, 10V<3.8 mΩId, Vgs = 55A, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
32 nCVgs = 5V40 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate