IPI80N06S2-07

IPI80N06, IPI80N06S2-07, IPI80N06S2-08, IPI80N06S2L-05, IPI80N06S2L-11, IPI80N06S3-05, IPI80N06S3-07, IPI80N06S3L-05, IPI80N06S3L-06, IPI80N06S3L-08

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Description

Parameters

Parameter		IPI80N06S2-07	IPI80N06S2-08	IPI80N06S2L-05	IPI80N06S2L-11	IPI80N06S3-05	IPI80N06S3-07	IPI80N06S3L-05	IPI80N06S3L-06	IPI80N06S3L-08
IC package	Package	I²Pak, TO-262 (3 straight leads + tab)
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Through-hole
Power dissipation	P	<250 W	<215 W	<300 W	<158 W	<165 W	<135 W	<165 W	<136 W	<105 W
Input capacitance of field effect transistor	C_iss	3.4 nFVds = 25V	2.86 nFVds = 25V	5.7 nFVds = 25V	2.075 nFVds = 25V	10.76 nFVds = 25V	7.768 nFVds = 25V	13.06 nFVds = 25V	9.417 nFVds = 25V	6.475 nFVds = 25V
Continuous voltage between drain and source	U_DSS	<55 V
Continuous drain current	I_DSS	<80 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<6.6 mΩId, Vgs = 68A, 10v	<8 mΩId, Vgs = 58A, 10V	<4.8 mΩId, Vgs = 80A, 10V	<11 mΩId, Vgs = 60A, 10V	<5.4 mΩId, Vgs = 63A, 10V	<6.8 mΩId, Vgs = 51A, 10V	<4.8 mΩId, Vgs = 69A, 10V	<5.9 mΩId, Vgs = 56A, 10V	<7.9 mΩId, Vgs = 43A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	110 nCVgs = 10V	96 nCVgs = 10V	230 nCVgs = 10V	80 nCVgs = 10V	240 nCVgs = 10V	170 nCVgs = 10V	273 nCVgs = 10V	196 nCVgs = 10V	134 nCVgs = 10V
FET Feature	FET Feature	Standard	Standard	Logic Level Gate	Logic Level Gate	Standard	Standard	Logic Level Gate	Logic Level Gate	Standard