IPD50R399

IPD50R399, IPD50R399CP

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Description

Parameters

ParameterIPD50R399CP
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<83 W
Input capacitance of field effect transistor
Ciss
890 pFVds = 100V
Continuous voltage between drain and source
UDSS
<550 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<399 mΩId, Vgs = 4.9A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
23 nCVgs = 10V
FET Feature
FET Feature
Standard