IPD30N03S2L-10

IPD30N03, IPD30N03S2L-07, IPD30N03S2L-10, IPD30N03S2L-20, IPD30N03S4L-09, IPD30N03S4L-14

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Description

Parameters

Parameter		IPD30N03S2L-07	IPD30N03S2L-10	IPD30N03S2L-20	IPD30N03S4L-09	IPD30N03S4L-14
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<136 W	<100 W	<60 W	<42 W	<31 W
Input capacitance of field effect transistor	C_iss	1.9 nFVds = 25V	1.2 nFVds = 25V	530 pFVds = 25V	1.52 nFVds = 15V	980 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<30 V
Continuous drain current	I_DSS	<30 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<6.7 mΩId, Vgs = 30A, 10V	<10 mΩId, Vgs = 30A, 10V	<20 mΩId, Vgs = 18A, 10V	<9 mΩId, Vgs = 30A, 10V	<13.6 mΩId, Vgs = 30A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	68 nCVgs = 10V	42 nCVgs = 10V	19 nCVgs = 10V	20 nCVgs = 10V	14 nCVgs = 10V
FET Feature	FET Feature	Logic Level Gate