IPB60R385CP

IPB60R385, IPB60R385CP

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Description

Parameters

ParameterIPB60R385CP
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<83 W
Input capacitance of field effect transistor
Ciss
790 pFVds = 100V
Continuous voltage between drain and source
UDSS
<650 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<385 mΩId, Vgs = 5.2A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
22 nCVgs = 10V
FET Feature
FET Feature
Standard