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| Parameter | IPB25N06S3-25 | IPB25N06S3L-22 | |
|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | |
Manufacturer | Manufacturer | Infineon Technologies | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <48 W | <50 W |
Input capacitance of field effect transistor | Ciss | 1.862 nFVds = 25V | 2.26 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <55 V | |
Continuous drain current | IDSS | <25 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <24.8 mΩId, Vgs = 15A, 10V | <21.3 mΩId, Vgs = 17A, 10V |
MOSFET series | Series | OptiMOS™ | |
Gate charge | QG | 41 nCVgs = 10V | 47 nCVgs = 10V |
FET Feature | FET Feature | Standard | Logic Level Gate |