IPB100N06

IPB100N06, IPB100N06S2-05, IPB100N06S2L-05, IPB100N06S3-03, IPB100N06S3-04, IPB100N06S3L-03, IPB100N06S3L-04

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Description

Parameters

Parameter		IPB100N06S2-05	IPB100N06S2L-05	IPB100N06S3-03	IPB100N06S3-04	IPB100N06S3L-03	IPB100N06S3L-04
IC package	Package	D²Pak, TO-263 (2 leads + tab)
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<300 W	<300 W	<300 W	<214 W	<300 W	<214 W
Input capacitance of field effect transistor	C_iss	5.11 nFVds = 25V	5.66 nFVds = 25V	21.62 nFVds = 25V	14.23 nFVds = 25V	26.24 nFVds = 25V	17.27 nFVds = 25V
Continuous voltage between drain and source	U_DSS	<55 V
Continuous drain current	I_DSS	<100 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<4.7 mΩId, Vgs = 80A, 10V	<4.4 mΩId, Vgs = 80A, 10V	<3 mΩId, Vgs = 80A, 10V	<4.1 mΩId, Vgs = 80A, 10V	<2.7 mΩId, Vgs = 80A, 10V	<3.5 mΩId, Vgs = 80A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	170 nCVgs = 10V	230 nCVgs = 10V	480 nCVgs = 10V	314 nCVgs = 10V	550 nCVgs = 10V	362 nCVgs = 10V
FET Feature	FET Feature	Standard	Logic Level Gate	Standard	Standard	Logic Level Gate	Logic Level Gate