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| Parameter | IPB100N04S2-04 | IPB100N04S2L-03 | IPB100N04S3-03 | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | ||
Manufacturer | Manufacturer | Infineon Technologies | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <300 W | <300 W | <214 W |
Input capacitance of field effect transistor | Ciss | 5.3 nFVds = 25V | 6 nFVds = 25V | 9.6 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <40 V | ||
Continuous drain current | IDSS | <100 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <3.3 mΩId, Vgs = 80A, 10V | <3 mΩId, Vgs = 80A, 10V | <2.5 mΩId, Vgs = 80A, 10V |
MOSFET series | Series | OptiMOS™ | ||
Gate charge | QG | 172 nCVgs = 10V | 230 nCVgs = 10V | 145 nCVgs = 10V |
FET Feature | FET Feature | Standard | Logic Level Gate | Standard |