IPB04N03

IPB04N03, IPB04N03LA, IPB04N03LAG, IPB04N03LAT, IPB04N03LB, IPB04N03LBG

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Description

Parameters

ParameterIPB04N03LAIPB04N03LAGIPB04N03LATIPB04N03LBIPB04N03LBG
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<107 W
Input capacitance of field effect transistor
Ciss
3.877 nFVds = 15V3.877 nFVds = 15V3.877 nFVds = 15V5.203 nFVds = 15V5.203 nFVds = 15V
Continuous voltage between drain and source
UDSS
<25 V<25 V<25 V<30 V<30 V
Continuous drain current
IDSS
<80 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<3.9 mΩId, Vgs = 55A, 10V<3.9 mΩId, Vgs = 55A, 10V<3.9 mΩId, Vgs = 55A, 10V<3.5 mΩId, Vgs = 55A, 10V<3.5 mΩId, Vgs = 55A, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
32 nCVgs = 5V32 nCVgs = 5V32 nCVgs = 5V40 nCVgs = 5V40 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate